features low cost diffused junction low leakage low forward voltage drop mechanical data terminals: axial lead ,solderable per mil- std-750,method 2026 polarity: color band denotes cathode weight: 0.014 ounces,0.39 grams mounting position: any ratings at 25 ambient temperature unless otherwise specified. single phase,half wave,60 hz,resistive or inductive load. for capacitive load,derate by 20%. un i t s max imum r e c ur r e nt p eak r ev er s e v o lta ge v rrm 50 100 150 200 300 400 600 800 v max imum rms v o lt ag e v r m s 35 70 105 140 210 280 420 560 v max imum dc bloc king v olta ge v dc maximum average forw ard rectified current 9.5mm lead length, @t a =75 peak f orw ard surge current 8.3ms single half -sine-w ave superimposed on rated load @t j =125 maximum instantaneous forw ard voltage @ 2 . 0 a v f v maximum reverse current @t a =25 at rated dc blocking voltage @t a =125 maximum reverse recovery (note1) t rr ns typical junction capacitance (note2) c j pf r ja r jl o p e r a t i n g j u n c t i o n t e m p e r a t u r e r a n g e t j storage temperature range t stg 3 . t he r m a l r e s i s t an c e f r o m j u n c t i o n t o a m b i e n t . i fsm i r note: 1. measured with i f =0.5a, i r =1a, i rr =0.25a. 2. m e a s u r e d at 1 . 0 m h z a n d a pp li ed r e v e r s e v o l t a g e of 4 . 0v d c . a 1 . 25 1.7 t y p i c a l t h e r m a l r e s i s t a n ce ( n o t e 3 ) - 55 ---- + 150 0 . 95 e g p 2 0 a (z) - - - e g p 20 k (z) a i f ( a v ) 2 . 0 h i gh e f f i c i e n cy r e c t i f i er s v o l t a g e r a n g e : 50 - - - 8 0 0 v current: 2.0 a m ax i m u m r at i n g s an d e l e c t r i c al c h ar ac t e r i s t i c s case:jedec do--15,molded plastic egp egp egp egp egp egp egp egp 20a 20b 20c 20d 20f 20g 20j 20k the plastic material carries u/l recognition 94v-0 do - 1 5 high current capability easily cleaned with alcohol,isopropanol and similar solvents <d 40 a 15 50 - 55 ---- + 150 70 45 75 5.0 10 0 50 100 150 200 300 400 600 800 v 75 typical thermal resistance (note 4) 4.thermal resistance from junction to lead. dimensions in millimeters www.diode.kr diode semiconductor korea
0 . 01 50 0 . 1 1 0 .4 0 .6 1 .2 1 .4 0 . 8 1 . 0 1 . 6 1.8 2.0 10 egp20a-egp20d egp20j-EGP20K egp20f-egp20g pulse width=300 s 1% duty cycle amperes amperes amperes junction capacitance,pf notes:1.rise time = 7ns max.input impedance = 1m .22pf. jjjjj 2.rise time =10ns max.source impedance=50 . i n s t a n t a n e o u s f o r w a r d v o l t a g e , v o l t s instantaneous forward current fig . 1 -- test circuit diagram and reverse recovery time characteristic e g p 20 a (z) --- e g p 20 k (z) average forward current set t i m e b a s e f o r 2 0 /30 n s / c m fig.2 -- typical forward characteristic fig.3 -- forward derating curve z fig.4 -- typical junction capacitance fig.5 -- peak forward surge current ambient temperature, peak forward surge current n u m b e r o f c y c l e s a t 6 0 h z reverse voltage,volts 0.375"(9.5mm)lead length 25 0 0 50 0 . 5 1 1 . 5 2 . 0 100 75 125 150 175 e g p 2 0a-e g p 20 k single phase half wave 60hz resistive or inductive load 0 30 1 10 100 15 45 60 75 105 90 t j =125 8.3ms single half sine-wave e g p 20 a - e g p 20 k 0 . 1 0 20 e g p 2 0 a - e g p 2 0 d e g p 2 0 f & e g p 20 k 1 100 10 1 0 00 60 40 80 120 100 140 t j =25 4 ( - ) pulse g enerator (no te2) ( + ) d. u. t. 1 no ni n- ducti ve 50 n 1. 10 n1. o sci llo scope (no te 1) (+) 25vdc (approx) (-) t rr - 1 . 0 a - 0 . 25a 0 + 0 . 5 a 1cm diode semiconductor korea www.diode.kr
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